JPS627703B2 - - Google Patents

Info

Publication number
JPS627703B2
JPS627703B2 JP59053244A JP5324484A JPS627703B2 JP S627703 B2 JPS627703 B2 JP S627703B2 JP 59053244 A JP59053244 A JP 59053244A JP 5324484 A JP5324484 A JP 5324484A JP S627703 B2 JPS627703 B2 JP S627703B2
Authority
JP
Japan
Prior art keywords
layer
opening
insulating film
semiconductor
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59053244A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59229866A (ja
Inventor
Kimyoshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59053244A priority Critical patent/JPS59229866A/ja
Publication of JPS59229866A publication Critical patent/JPS59229866A/ja
Publication of JPS627703B2 publication Critical patent/JPS627703B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59053244A 1984-03-19 1984-03-19 半導体装置 Granted JPS59229866A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59053244A JPS59229866A (ja) 1984-03-19 1984-03-19 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59053244A JPS59229866A (ja) 1984-03-19 1984-03-19 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57049797A Division JPS57172763A (en) 1982-03-27 1982-03-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS59229866A JPS59229866A (ja) 1984-12-24
JPS627703B2 true JPS627703B2 (en]) 1987-02-18

Family

ID=12937375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59053244A Granted JPS59229866A (ja) 1984-03-19 1984-03-19 半導体装置

Country Status (1)

Country Link
JP (1) JPS59229866A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4200753A1 (de) * 1991-01-21 1992-07-30 Mitsubishi Electric Corp Halbleitereinrichtung mit mos-feldeffekttransistor und herstellungsverfahren hierfuer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254566A (ja) * 1988-08-18 1990-02-23 Seiko Epson Corp 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4200753A1 (de) * 1991-01-21 1992-07-30 Mitsubishi Electric Corp Halbleitereinrichtung mit mos-feldeffekttransistor und herstellungsverfahren hierfuer
DE4200753C2 (de) * 1991-01-21 1996-09-26 Mitsubishi Electric Corp Halbleitereinrichtung mit MOS-Feldeffekttransistor und Herstellungsverfahren hierfür

Also Published As

Publication number Publication date
JPS59229866A (ja) 1984-12-24

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